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Samsung 990 EVO Plus MZ-V9S4T0BW 4 TB

Photos - SSD Samsung 990 EVO Plus MZ-V9S4T0BW 4 TB
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Samsung MZ-V9S4T0BW
Placement
internal
Size
4000 GB
Form factor
M.2
M.2 interface
PCI-E 5.0 2x / PCI-E 4.0 4x /
Controller
Samsung Piccolo
Memory type
3D TLC NAND / Samsung 236-Layer (V8) /
NVMe
Write speed
6300 MB/s
Read speed
7250 MB/s
MTBF
1.5 m h
Write IOPS
1400 K
Read IOPS
1050 K
TBW
2400 TB
DWPD
0.3 times/day
Manufacturer's warranty
5 years
TRIM
Data encryption
/ TCG Opal 2.0 /
M.2 cooling
graphene heatsink
Size
22x80 mm
Official Website
semiconductor.samsung.com
Added to E-Catalog
october 2024
P/N
MZ-V9S4T0AM

MZ-V9S4T0BW

Capable of running at PCI-E 4.0 4x or PCI-E 5.0 2x. 8th-generation V-NAND with three bits per cell (TLC) and a 5nm controller without an external DRAM buffer.
The information in the model description is for reference purposes.
Always clarify the specifications and configuration of the product with the online store manager before purchasing.
Catalog Samsung 2025 - new arrivals, bestsellers, and the most relevant models Samsung.

Samsung 990 EVO Plus MZ-V9S4T0BW configurations

Price for Samsung 990 EVO Plus MZ-V9S4T0BW
Samsung 990 EVO Plus MZ-V9S1T0BW 1 TBfrom $79.991 offer
Samsung 990 EVO Plus MZ-V9S2T0BW 2 TBfrom $139.991 offer
Samsung 990 EVO Plus MZ-V9S4T0BW 4 TBfrom $269.992 offers
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