Samsung 990 EVO Plus MZ-V9S4T0BW 4 TB
 | New New product is expected Placement: internal; Size (GB): 4000; Form factor: M.2; M.2 interface: PCI-E 5.0 2x; Controller: Samsung Piccolo; NVMe; Write speed (MB/s): 6300; Read speed (MB/s): 7250; DWPD (times/day): 0.3; Manufacturer's warranty: 5 years; TRIM; Data encryption; M.2 cooling: graphene heatsink |
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4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6000 MB/s, read: 7400 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7400 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 4000 MB/s, read: 5000 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6600 MB/s, read: 7400 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 3400 MB/s, read: 4700 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6600 MB/s, read: 7300 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6600 MB/s, read: 7300 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 7000 MB/s, read: 7300 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7000 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7450 MB/s, DRAM buffer, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6900 MB/s, read: 7000 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6600 MB/s, read: 7300 MB/s, warranty 5 years
4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 4200 MB/s, read: 5000 MB/s, warranty 5 years
Samsung MZ-V9S4T0BW | |||||||||||||||||||||||||||||||||||||||||||||
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Capable of running at PCI-E 4.0 4x or PCI-E 5.0 2x. 8th-generation V-NAND with three bits per cell (TLC) and a 5nm controller without an external DRAM buffer.
Information in model description is for reference purposes.
Before buying always check characteristics and configuration of product with online store manager
Before buying always check characteristics and configuration of product with online store manager
TLC, QLC, MLC, SLC: which type of drive memory is better?Important differences between the types of NAND memory TLC, QLC, MLC, SLC, which determine the scope of their use and development prospects
How to choose the right SSD?Choosing an SSD with the required speed and good reliability for home, work and gaming
Series Samsung EVO (high efficiency TLC)Compare using chart →
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3300 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 5.0 2x, 3D TLC NAND, write: 4200 MB/s, read: 5000 MB/s, warranty 5 years
500 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3300 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 5.0 2x, 3D TLC NAND, write: 4200 MB/s, read: 5000 MB/s, warranty 5 years
500 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3200 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
500 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
1000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
4000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 520 MB/s, read: 550 MB/s, SATA 3, DRAM buffer, warranty 5 years
2000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
4000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
1000 GB, 2.5", 3D TLC NAND, write: 520 MB/s, read: 550 MB/s, SATA 3, DRAM buffer, warranty 5 years
4000 GB, 2.5", 3D TLC NAND, write: 520 MB/s, read: 540 MB/s, SATA 3, warranty 5 years
Samsung 990 EVO Plus MZ-V9S4T0BW configurations
| Price for Samsung 990 EVO Plus MZ-V9S4T0BW | ||||
|---|---|---|---|---|
| Samsung 990 EVO Plus MZ-V9S1T0BW 1 TB | |||
| Samsung 990 EVO Plus MZ-V9S2T0BW 2 TB | |||
| Samsung 990 EVO Plus MZ-V9S4T0BW 4 TB | |||
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