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Samsung 990 EVO Plus MZ-V9S2T0BW 2 TB

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Placement: internal; Size (GB): 2000; Form factor: M.2; M.2 interface: PCI-E 5.0 2x; Controller: Samsung Piccolo; NVMe; Write speed (MB/s): 6300; Read speed (MB/s): 7250; DWPD (times/day): 0.3; Manufacturer's warranty: 5 years; TRIM; Data encryption; M.2 cooling: graphene heatsink
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Samsung 990 EVO Plus [MZ-V9S2T0BW]
Samsung MZ-V9S2T0BW
Placement
internal
Size
2000 GB
Form factor
M.2
M.2 interface
PCI-E 5.0 2x / PCI-E 4.0 4x /
Controller
Samsung Piccolo
Memory type
3D TLC NAND / Samsung 236-Layer (V8) /
NVMe
Write speed
6300 MB/s
Read speed
7250 MB/s
MTBF
1.5 m h
Write IOPS
1350 K
Read IOPS
1000 K
TBW
1200 TB
DWPD
0.3 times/day
Manufacturer's warranty
5 years
TRIM
Data encryption
/ TCG Opal 2.0 /
M.2 cooling
graphene heatsink
Size
22x80 mm
Official Website
semiconductor.samsung.com
Added to E-Catalog
october 2024
P/N
MZ-V9S2T0AM

MZ-V9S2T0BW

Capable of running at PCI-E 4.0 4x or PCI-E 5.0 2x. 8th-generation V-NAND with three bits per cell (TLC) and a 5nm controller without an external DRAM buffer.
Information in model description is for reference purposes.
Before buying always check characteristics and configuration of product with online store manager

Samsung 990 EVO Plus MZ-V9S2T0BW configurations

Price for Samsung 990 EVO Plus MZ-V9S2T0BW
Samsung 990 EVO Plus MZ-V9S1T0BW 1 TB
Samsung 990 EVO Plus MZ-V9S2T0BW 2 TB
Samsung 990 EVO Plus MZ-V9S4T0BW 4 TB
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