Samsung 990 EVO Plus MZ-V9S1T0BW 1 TB
 | New New product is expected Placement: internal; Size (GB): 1000; Form factor: M.2; M.2 interface: PCI-E 5.0 2x; Controller: Samsung Piccolo; NVMe; Write speed (MB/s): 6300; Read speed (MB/s): 7150; DWPD (times/day): 0.3; Manufacturer's warranty: 5 years; TRIM; Data encryption; M.2 cooling: graphene heatsink |
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1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3000 MB/s, read: 3500 MB/s, warranty 3 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 3200 MB/s, read: 3600 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1650 MB/s, read: 2100 MB/s, warranty 3 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 3000 MB/s, read: 3600 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1500 MB/s, read: 1800 MB/s, warranty 3 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 3200 MB/s, read: 5000 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 3000 MB/s, read: 3500 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1700 MB/s, read: 2110 MB/s, warranty 3 years
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1700 MB/s, read: 2100 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 4500 MB/s, read: 5000 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 6400 MB/s, read: 7400 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1700 MB/s, read: 2100 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1700 MB/s, read: 2100 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1600 MB/s, read: 2000 MB/s, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, write: 4150 MB/s, read: 4150 MB/s, warranty 5 years
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Capable of running at PCI-E 4.0 4x or PCI-E 5.0 2x. 8th-generation V-NAND with three bits per cell (TLC) and a 5nm controller without an external DRAM buffer.
TLC, QLC, MLC, SLC: which type of drive memory is better?Important differences between the types of NAND memory TLC, QLC, MLC, SLC, which determine the scope of their use and development prospects
How to choose the right SSD?Choosing an SSD with the required speed and good reliability for home, work and gaming
Information in model description is for reference purposes.
Before buying always check characteristics and configuration of product with online store manager
Before buying always check characteristics and configuration of product with online store manager
Series Samsung EVO (high efficiency TLC)Compare using chart →
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3300 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
500 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3200 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
500 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3300 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
500 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
1000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
4000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 520 MB/s, read: 550 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
2000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
4000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, SATA 3, 3D TLC NAND, write: 520 MB/s, read: 540 MB/s, DRAM buffer, warranty 5 years
250 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1500 MB/s, read: 3200 MB/s, DRAM buffer, warranty 3 years
500 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 1800 MB/s, read: 3200 MB/s, DRAM buffer, warranty 3 years
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Samsung 990 EVO Plus MZ-V9S1T0BW configurations
| Price for Samsung 990 EVO Plus MZ-V9S1T0BW | ||||
|---|---|---|---|---|
| Samsung 990 EVO Plus MZ-V9S1T0BW 1 TB | |||
| Samsung 990 EVO Plus MZ-V9S2T0BW 2 TB | |||
| Samsung 990 EVO Plus MZ-V9S4T0BW 4 TB | |||
