Samsung 990 EVO Plus MZ-V9S1T0BW 1 TB
Videos 2Photos 5 | New New product is expected Placement: internal; Size (GB): 1000; Form factor: M.2; M.2 interface: PCI-E 5.0 2x; Controller: Samsung Piccolo; NVMe; Write speed (MB/s): 6300; Read speed (MB/s): 7150; DWPD (times/day): 0.3; Manufacturer's warranty: 5 years; TRIM; Data encryption; M.2 cooling: graphene heatsink |
Samsung MZ-V9S1T0BW | |||||||||||||||||||||||||||||||||||||||||||||
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Capable of running at PCI-E 4.0 4x or PCI-E 5.0 2x. 8th-generation V-NAND with three bits per cell (TLC) and a 5nm controller without an external DRAM buffer.
TLC, QLC, MLC, SLC: which type of drive memory is better?Important differences between the types of NAND memory TLC, QLC, MLC, SLC, which determine the scope of their use and development prospects
How to choose the right SSD?Choosing an SSD with the required speed and good reliability for home, work and gaming
Information in model description is for reference purposes.
Before buying always check characteristics and configuration of product with online store manager
Before buying always check characteristics and configuration of product with online store manager
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Samsung 990 EVO Plus MZ-V9S1T0BW configurations
Price for Samsung 990 EVO Plus MZ-V9S1T0BW | ||||
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