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Samsung 990 EVO Plus MZ-V9S1T0BW 1 TB

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Placement: internal; Size (GB): 1000; Form factor: M.2; M.2 interface: PCI-E 5.0 2x; Controller: Samsung Piccolo; NVMe; Write speed (MB/s): 6300; Read speed (MB/s): 7150; DWPD (times/day): 0.3; Manufacturer's warranty: 5 years; TRIM; Data encryption; M.2 cooling: graphene heatsink
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Samsung 990 EVO Plus [MZ-V9S1T0BW]
Samsung MZ-V9S1T0BW
Placement
internal
Size
1000 GB
Form factor
M.2
M.2 interface
PCI-E 5.0 2x
Controller
Samsung Piccolo
Memory type
3D TLC NAND
NVMe
Write speed
6300 MB/s
Read speed
7150 MB/s
MTBF
1.5 m h
Write IOPS
1350 K
Read IOPS
850 K
TBW
600 TB
DWPD
0.3 times/day
Manufacturer's warranty
5 years
TRIM
Data encryption
M.2 cooling
graphene heatsink
Size
22x80 mm
Official Website
semiconductor.samsung.com
Added to E-Catalog
october 2024
P/N
MZ-V9S1T0AM

MZ-V9S1T0BW

Capable of running at PCI-E 4.0 4x or PCI-E 5.0 2x. 8th-generation V-NAND with three bits per cell (TLC) and a 5nm controller without an external DRAM buffer.
Information in model description is for reference purposes.
Before buying always check characteristics and configuration of product with online store manager
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Samsung 990 EVO Plus MZ-V9S1T0BW configurations

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