Samsung 840 EVO MZ-7TE750Z 750 GB
 | Outdated Product Placement: internal; Size (GB): 750; Form factor: 2.5"; Write speed (MB/s): 520; Read speed (MB/s): 540; |
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Information in model description is for reference purposes.
Before buying always check characteristics and configuration of product with online store manager
Catalog Samsung 2024 - new products, best sales and most actual models Samsung.
Before buying always check characteristics and configuration of product with online store manager
Catalog Samsung 2024 - new products, best sales and most actual models Samsung.
TLC, QLC, MLC, SLC: which type of drive memory is better?Important differences between the types of NAND memory TLC, QLC, MLC, SLC, which determine the scope of their use and development prospects
How to choose the right SSD?Choosing an SSD with the required speed and good reliability for home, work and gaming
Series Samsung EVO (high efficiency TLC)Compare using chart →
1000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3300 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
1000 GB, M.2, 22x80, PCI-E 5.0 2x, 3D TLC NAND, write: 4200 MB/s, read: 5000 MB/s, warranty 5 years
500 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3300 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
2000 GB, M.2, 22x80, PCI-E 5.0 2x, 3D TLC NAND, write: 4200 MB/s, read: 5000 MB/s, warranty 5 years
500 GB, M.2, 22x80, PCI-E 3.0 4x, 3D TLC NAND, write: 3200 MB/s, read: 3500 MB/s, DRAM buffer, warranty 5 years
500 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
1000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
4000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 520 MB/s, read: 550 MB/s, SATA 3, DRAM buffer, warranty 5 years
2000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
250 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
4000 GB, 2.5", 3D TLC NAND, write: 530 MB/s, read: 560 MB/s, SATA 3, DRAM buffer, warranty 5 years
1000 GB, 2.5", 3D TLC NAND, write: 520 MB/s, read: 550 MB/s, SATA 3, DRAM buffer, warranty 5 years
Samsung 840 EVO MZ-7TE750Z configurations
| Price for Samsung 840 EVO MZ-7TE750Z | ||||
|---|---|---|---|---|
| Samsung 840 EVO MZ-7TE120BW 120 GB | from $101.19 | 1 offer | |
| Samsung 840 EVO MZ-7TE250BW 250 GB | from $99.75 | 1 offer | |
| Samsung 840 EVO MZ-7TE250LW 250 GB | from $199.99 | 1 offer | |
| Samsung 840 EVO MZ-7TE250KW 250 GB | from $199.99 | 1 offer | |
| Samsung 840 EVO MZ-7TE500BW 500 GB | from $179.99 | 1 offer | |
| Samsung 840 EVO MZ-7TE500LW 500 GB | from $299.99 | 1 offer | |
| Samsung 840 EVO MZ-7TE1T0BW 1 TB | from $399.99 | 1 offer | |
Video reviews
Samsung 840 EVO 250gb SSD Unboxing
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Samsung 840 EVO & Sapphire R9 290 Tri-x Oc @ Grid 2 (Part 2)
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Samsung 840 EVO SSD - Windows 8.1 Boot Speed
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Samsung 840 EVO Series SSD: 2013 SSD Global Summit
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Samsung 840 Evo SSD Overview
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Samsung 840 EVO SSD Overview and Unboxing
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[14+ Years] Pis : Unboxing 250GB Samsung 840 EVO
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Samsung 840 EVO 120 Gb SSD Shutdown and Bootup
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Brinell Drive SSD 500GB (Samsung 840 EVO) - Review
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Eray's Gaming PC Build [Part #3] - Samsung 840 EVO SSD
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Unboxing Samsung Electronics 840 EVO-Series 120GB SSD
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We recommend
1000 - 8000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, 6300 / 6600 MB/s, IOPS 1100 / 1200 K, 7200 / 7300 MB/s, IOPS 800 / 1200 K
250 - 2000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, 2000 - 4900 MB/s, IOPS 470 / 800 K, 4000 - 5150 MB/s, IOPS 240 - 740 K
250 - 4000 GB, 2.5", 3D TLC NAND, 440 - 520 MB/s, IOPS 78 - 83 K, 555 / 560 MB/s, IOPS 80 - 90 K
1000 / 2000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, 5000 / 5100 MB/s, IOPS 1000 K, 7000 MB/s, IOPS 1000 K
1000 - 4000 GB, M.2, 22x80, PCI-E 4.0 4x, 3D TLC NAND, 6900 MB/s, IOPS 1550 K, 7450 MB/s, IOPS 1200 - 1600 K
1000 / 2000 GB, M.2, 22x80, PCI-E 5.0 2x, 3D TLC NAND, 4200 MB/s, IOPS 800 K, 5000 MB/s, IOPS 620 / 700 K
