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Comparison Intel 660p Series SSDPEKNW512G8X1 512 GB vs Samsung 860 EVO M.2 MZ-N6E500BW 500 GB

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Intel 660p Series SSDPEKNW512G8X1 512 GB
Samsung 860 EVO M.2 MZ-N6E500BW 500 GB
Intel 660p Series SSDPEKNW512G8X1 512 GBSamsung 860 EVO M.2 MZ-N6E500BW 500 GB
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Main
QLC - Quad-Level Cell, storage of four bits of information in one cell. Unlike TLC, which contain three bits of information per cell. Due to this, the density of data storage increased by 33%.
Placementinternalinternal
Size512 GB500 GB
Form factor
M.2 /2280/
M.2
M.2 interfacePCI-E 3.0 4xSATA 3
Technical specs
ControllerSilicon Motion SM2263Samsung MJX
Cache memory512 MB
Memory type3D QLC NAND3D TLC NAND
NVMe
 /1.3/
Write speed1000 MB/s520 MB/s
Read speed1500 MB/s550 MB/s
Shockproof1000 G1500 G
MTBF1.6 m h1.5 m h
Write IOPS220 K88 K
Read IOPS90 K97 K
TBW100 TB300 TB
DWPD0.1 times/day0.3 times/day
Manufacturer's warranty5 years5 years
General
TRIM
Data encryption
Size22x80 mm22x80 mm
Weight10 g8 g
Added to E-Catalogaugust 2018february 2018

Size

Nominal drive capacity. This parameter directly determines not only the amount of data that can fit on the device, but also its cost; many SSD models even come in several versions that differ in capacity. Therefore, when choosing, it is worth considering the real needs and features of the application — otherwise you can overpay a significant amount for volumes that are not needed in fact.

In terms of actual values, a capacity of 120 GB or less is considered small these days. This can also be equated with a 240 GB SSD. Average values are already considered 500 GB, increased — 1 TB(in the range of which SSDs fall 400 and 800 GB). And the most capacious modern SSDs can accommodate 2 TB, 4 TB and even more.

M.2 interface

Connection interface supported by an M.2 drive (see Form Factor).

All such drives use a standard hardware connector, however, different electrical (logical) interfaces can be implemented through this connector — either SATA (usually SATA 3), or PCI-E (most often in PCI-E 3.0 2x, PCI-E 3.0 4x, PCI-E 4.0 4x, PCI-E 5.0 4x). The M.2 connector on the motherboard must support the appropriate interface — otherwise the normal operation of the SSD will not be possible. Let's consider each option in more detail.

SATA 3 connectivity provides data transfer rates up to 5.9 Gbps (approx. 600 Mbps); it is considered a very simple option and is used mainly in low-cost M.2 modules. This is due to the fact that this interface was originally created for hard drives, and for faster SSD drives, its capabilities may no longer be enough.

In turn, the PCI-E interface provides higher connection speeds and allows the implementation of special technologies like NVMe (see below). The designation of such an interface indicates its version and the number of lines – for example, PCI-E 3.0 2x means version 3 with two data lines. By this designation you can determine the maximum connection speed: PCI-E version 3.0 gives just under 1 GBps per line, version 4.0 – twice as much (up to 2 GBps), 5.0 – twice as much a...s the “four” (almost 4 GBps). Thus, for example, for PCI-E 5.0 4x the maximum data transfer speed will be about 15 GBps (4 lanes of almost 4 GBps). However, we note that newer and faster drives can be connected to earlier and slower M.2 connectors – except that the data transfer speed will be limited by the capabilities of the connector.

Controller

Model of the controller installed in the SSD.

The controller is a control circuit, which, in fact, ensures the exchange of information between the memory cells and the computer to which the drive is connected. The capabilities of a particular SSD module (in particular, read and write speed) largely depend on this particular scheme. Knowing the controller model, you can find detailed data on it and evaluate the capabilities of the drive. For simple everyday use, this information is usually not needed, but for professionals and enthusiasts (modders, overclockers) it can come in handy.

Nowadays, high-end controllers are produced mainly under such brands: InnoGrit, Maxio, Phison, Realtek, Silicon Motion, Samsung.

Cache memory

Buffer memory is a small chip on the SSD drive that acts as a data transit between the drive and the motherboard. In fact, it acts as a kind of intermediate link between the computer's RAM and the drive's own permanent memory. The buffer is used to store the most frequently requested data from the module, which reduces the access time to them — the information is sent from the cache, instead of being read from the magnetic media. Usually, the larger the buffer size, the higher the speed of the drive, all other things being equal. Also, drives with a large amount of buffer memory reduce the load on the processor.

Memory type

The type of the main memory of the drive determines the features of the distribution of information over hardware cells and the physical features of the cells themselves.

MLC. Multi Level Cell memory based on multi-level cells, each of which contains several signal levels. MLC memory cells store 2 bits of information. Has optimum indicators of reliability, power consumption and productivity. Until recently, the technology was popular in entry-level and mid-range SSD modules, now it is gradually being replaced by more advanced options in the manner of TLC or 3D MLC.

TLC. The evolution of MLC technology. One Flash Memory Triple Level Cell can store 3 bits of information. Such a recording density somewhat increases the likelihood of errors compared to MLC, in addition, TLC memory is considered less durable. A positive feature of the nature of this technology is its affordable cost, and various design tricks can be used to improve reliability in SSDs with TLC memory.

3D NAND. In a 3D NAND structure, several layers of memory cells are arranged vertically, and interconnections are organized between them. This provides greater storage capacity without increasing the physical size of the drive and improves memory performance due to shorter connections for each memory cell. In SSD drives, 3D NAND memory can use MLC, TLC or QLC chips - more details...about them are described in the corresponding help paragraphs.

3D MLC NAND. MLC-memory has a multilayer structure — its cells are placed on the board not in one level, but in several "floors". As a result, manufacturers have achieved an increase in storage capacity without a noticeable increase in size. Also, 3D MLC NAND memory is characterized by higher reliability than the original MLC (see the relevant paragraph), at a lower manufacturing cost.

3D TLC NAND. "Three-dimensional" modification of the TLC technology (see the relevant paragraph) with the placement of memory cells on the board in several layers. This arrangement allows you to achieve higher capacity with smaller sizes of the drives themselves. In production, such memory is simpler and cheaper than a single-layer one.

3D QLC NAND. Quad Level Cell flash type with 4 bits of data in each cell. The technology is designed to make SSDs with large volumes widely available and finally retire traditional HDDs. In the 3D QLC NAND configuration, the memory is built according to a “multi-level” scheme with the placement of cells on the board in several layers. "Three-dimensional" structure reduces the cost of production of memory modules and allows you to increase the volume of drives without compromising their weight and size component.

3D XPoint. A fundamentally new type of memory, radically different from traditional NAND. In such drives, memory cells and selectors are located at the intersections of perpendicular rows of conductive tracks. The mechanism for recording information in cells is based on changing the resistance of the material without the use of transistors. 3D XPoint memory is simple and inexpensive to produce, and offers much better speed and durability. The prefix "3D" in the name of the technology says that the cells on the crystal are placed in several layers. The first generation of 3D XPoint received a two-layer structure and was made using a 20-nanometer process technology.

NVMe

NVMe drive support.

NVMe is a communication protocol designed specifically for SSD modules and used when connected via the PCI-E bus. This protocol was developed to eliminate the shortcomings of earlier connection standards (like SCSI or SATA) — primarily low speed, which did not allow realizing the full capabilities of solid-state memory. NVMe takes into account the key advantages of SSD — independent access, multithreading and low latency. Support for this protocol is built into all major modern operating systems; it works not only through the original PCIe interface, but also through M.2 (see Form Factor). And the U.2 connector was generally created specifically for NVMe SSDs (although the presence of this connector in itself does not mean compatibility with this protocol).

Write speed

The highest speed in write mode characterizes the speed with which the module can receive information from a connected computer (or other external device). This speed is limited both by the connection interface (see "Connector"), and by the characteristics of the device of the SSD itself.

Read speed

The highest data exchange rate with a computer (or other external device) that the drive can provide in read mode; in other words — the highest speed of information output from the drive to an external device. This speed is limited both by the connection interface (see "Connector"), and by the characteristics of the device of the SSD itself. Its values can vary from 100 – 500 MB / s in the slowest models to 3 Gb / s and higher in the most advanced ones.

Shockproof

A parameter that determines the resistance of the drive to drops and shocks during operation. Measured in G — units of overload, 1 G corresponds to the usual force of gravity. The higher the G number, the more resistant the device is to various kinds of shocks and the less likely it is to damage the data in it, say, in the event of a fall. This parameter is especially important for external drives (see Type).
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Samsung 860 EVO M.2 often compared