Comparison Samsung 870 EVO MZ-77E1T0BW 1 TB

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vs Samsung 870 QVO MZ-77Q1T0 1 TB

Buffer memory is a small chip on the SSD drive that acts as a data transit between the drive and the motherboard. In fact, it acts as a kind of intermediate link between the computer's RAM and the drive's own permanent memory. The buffer is used to store the most frequently requested data from the module, which reduces the access time to them — the information is sent from the cache, instead of being read from the magnetic media. Usually, the larger the buffer size, the higher the speed of the drive, all other things being equal. Also, drives with a large amount of buffer memory reduce the load on the processor.

The type of the main memory of the drive determines the features of the distribution of information over hardware cells and the physical features of the cells themselves.

— MLC. Multi Level Cell memory based on multi-level cells, each of which contains several signal levels. MLC memory cells store 2 bits of information. Has optimum indicators of reliability, power consumption and productivity. Until recently, the technology was popular in entry-level and mid-range SSD modules, now it is gradually being replaced by more advanced options in the manner of TLC or 3D MLC.

— TLC. The evolution of MLC technology. One Flash Memory Triple Level Cell can store 3 bits of information. Such a recording density somewhat increases the likelihood of errors compared to MLC, in addition, TLC memory is considered less durable. A positive feature of the nature of this technology is its affordable cost, and various design tricks can be used to improve reliability in SSDs with TLC memory.

— 3D NAND. In a 3D NAND structure, several layers of memory cells are arranged vertically, and interconnections are organized between them. This provides greater storage capacity without increasing the physical size of the drive and improves memory performance due to shorter connections for each memory cell. In SSD drives, 3D NAND memory can use MLC, TLC or QLC chips - more details...about them are described in the corresponding help paragraphs.

— 3D MLC NAND. MLC-memory has a multilayer structure — its cells are placed on the board not in one level, but in several "floors". As a result, manufacturers have achieved an increase in storage capacity without a noticeable increase in size. Also, 3D MLC NAND memory is characterized by higher reliability than the original MLC (see the relevant paragraph), at a lower manufacturing cost.

— 3D TLC NAND. "Three-dimensional" modification of the TLC technology (see the relevant paragraph) with the placement of memory cells on the board in several layers. This arrangement allows you to achieve higher capacity with smaller sizes of the drives themselves. In production, such memory is simpler and cheaper than a single-layer one.

— 3D QLC NAND. Quad Level Cell flash type with 4 bits of data in each cell. The technology is designed to make SSDs with large volumes widely available and finally retire traditional HDDs. In the 3D QLC NAND configuration, the memory is built according to a “multi-level” scheme with the placement of cells on the board in several layers. "Three-dimensional" structure reduces the cost of production of memory modules and allows you to increase the volume of drives without compromising their weight and size component.

— 3D XPoint. A fundamentally new type of memory, radically different from traditional NAND. In such drives, memory cells and selectors are located at the intersections of perpendicular rows of conductive tracks. The mechanism for recording information in cells is based on changing the resistance of the material without the use of transistors. 3D XPoint memory is simple and inexpensive to produce, and offers much better speed and durability. The prefix "3D" in the name of the technology says that the cells on the crystal are placed in several layers. The first generation of 3D XPoint received a two-layer structure and was made using a 20-nanometer process technology.

The abbreviation TBW stands for drive time between failures, expressed in terabytes. In other words, this is the total amount of information that is guaranteed to be written (rewritten) to this module. This metric measures the overall reliability and lifespan of a drive—the higher the TBW, the longer the device will last, all other things being equal.

Note that knowing the TBW and the warranty period, you can calculate the number of rewrites per day (DWPD, see the relevant paragraph), if the manufacturer did not specify these data. To do this, use the formula: DWPD = TBW / (V * T * 365), where V is the drive capacity in terabytes, T is the warranty period (years). As for specific numbers, there are a lot of drives on the market with a relatively low TBW — up to 100 TB ; even these values are often sufficient for everyday use for a considerable amount of time. However, models with TBW at the level of 100 – 500 TB are more common. Values of 500 – 1000 TB can be classified as "above average", and in the most reliable solutions this figure is even higher.

Manufacturer's warranty provided for this model.

In fact, this is the minimum service life promised by the manufacturer, subject to the rules of operation. Most often, the actual service life of the device is much longer than the guaranteed one. However, keep in mind that the warranty often includes additional terms, such as “[so many years] or until the TBW is exhausted” (for more on TBW, see above).

Specific warranty periods may vary even for similar drives from the same manufacturer. The most popular options are 3 years and 5 years, however, there are other figures — up to 10 years in the most expensive and high-end models.