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Comparison Samsung DDR4 SO-DIMM M471A1K43CB1-CRC vs GOODRAM DDR4 SO-DIMM 1x8Gb GR2400S464L17S/8G

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Samsung DDR4 SO-DIMM M471A1K43CB1-CRC
GOODRAM DDR4 SO-DIMM 1x8Gb GR2400S464L17S/8G
Samsung DDR4 SO-DIMM M471A1K43CB1-CRCGOODRAM DDR4 SO-DIMM 1x8Gb GR2400S464L17S/8G
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Memory capacity8 GB8 GB
Memory modules11
Form factorSO-DIMMSO-DIMM
TypeDDR4DDR4
Specs
Memory speed2400 MHz2400 MHz
Clock speed19200 MB/s19200 MB/s
CAS latencyCL17CL17
Memory timing17-17-17
Voltage1.2 В1.2 В
Coolingno coolingno cooling
Module profilestandardstandard
Added to E-Catalogmay 2018may 2018
Glossary

Memory timing

Timing is a term that refers to the time it takes to complete an operation. To understand the timing scheme, you need to know that structurally RAM consists of banks (from 2 to 8 per module), each of which, in turn, has rows and columns, like a table; when accessing memory, the bank is selected first, then the row, then the column. The timing scheme shows the time during which the four main operations are performed when working with RAM, and is usually written in four digits in the format CL-Trcd-Trp-Tras, where

CL is the minimum delay between receiving a command to read data and the start of their transfer;

Trcd — the minimum time between the selection of a row and the selection of a column in it;

Trp is the minimum time to close a row, that is, the delay between the signal and the actual closing. Only one bank line can be opened at a time; Before opening the next line, you must close the previous one.

Tras — the minimum time the row is active, in other words, the shortest time after which the row can be commanded to close after it has been opened.

Time in the timing scheme is measured in cycles, so the actual memory performance depends not only on the timing scheme, but also on the clock frequency. For example, 1600 MHz 8-8-8-24 memory will run at the same speed as 800 MHz 4-4-4-12 memory—in either case timings, if expressed in nanoseconds, will be 5-5-5-15.
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